unisonic technologies co., ltd TC200 preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r201-087.a epitaxial planar npn transistor ? description the utc TC200 is an epitaxial planar npn transistor; it uses utc?s advanced technology to provide the customers with high dc current gain and low collector-emitter saturation voltage, etc. the utc TC200 is suitable for general purpose and switching application, etc. ? features * high dc current gain * low collector-emitter saturation voltage ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 TC200l-x-t92-b TC200g-x-t92-b to-92 e c b tape box TC200l-x-t92-k TC200g-x-t92-k to-92 e c b bulk note: pin assignment: c: collector b: base e: emitter TC200l-x-t92-b (1)packing type (2)package type (3)rank (4)halogen free (1) b: tape box, k: bulk (2) t92: to-92 (3) refer to classification of h fe1 (4) l: lead free, g: halogen free
TC200 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-087.a ? absolute maximum ratings (t a =25 c) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c 625 mw junction temperature t j 150 c storage temperature t stg -55 ~150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =50v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a dc current gain h fe1 v ce =2v, i c =50ma 70 240 h fe2 v ce =2v, i c =200ma 25 collector-emitter satu ration voltage v ce ( sat ) i c =100ma, i b =10ma 0.25 v base-emitter voltage v be v ce =2v, i c =200ma 1.0 v current gain bandwidth product f t v ce =6v, i c =20ma 300 mhz output capacitance c ob v cb =6v, i e =0, f=1mhz 7.0 pf ? classification of h fe1 rank o y h fe1 70 ~ 140 120 ~ 240
TC200 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-087.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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